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| EMP213 UPDATED 05/08/2008 12.5 - 15.5 GHz Power Amplifier MMIC FEATURES * * * * * * 12.5 - 15.5 GHz Operating Frequency Range 27.0dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 17dBm Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 2250um X 1130um Thickness: 85um 15um APPLICATIONS Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 C, 50 ohm, VDD=7V, IDQ=400mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL NF Idss VDD Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @f=10MHz, Each Tone Pout 17dBm Ids = 60% +10%Idss Input Return Loss Output Return Loss Noise Figure Saturated Drain Current Drain Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 VDS =3V, VGS =0V 475 MIN 12.5 26.0 14.0 27.0 16.0 -41 -12 -8 9 620 7 22 +85 750 8 o TYP MAX 15.5 UNITS GHz dBm dB -38 -8 -5 dBc dB dB dB mA V C/W C MAXIMUM RATINGS AT 25C1,2 SYMBOL Vds VGS Ids IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12V -8V Idss 57mA 24dBm 175C -65/175C 6.2W CONTINUOUS 8V -4V 650mA 9.5 mA @ 3dB compression 150C -65/150C 5.2W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH -Tb)/RTH Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised May 2008 EMP213 UPDATED 05/08/2008 12.5 - 15.5 GHz Power Amplifier MMIC Typical Performance: 1. Small Signal Performance (@7V, 400mA) 20 15 10 5 0 -5 -10 -15 -20 -25 -30 10 11 12 13 14 15 Frequency (GHz) 16 17 18 DB(|S[2,1]|) * DB(|S[1,1]|) * DB(|S[2,2]|) * EMP213 Small Signal Performance 2. OIMD VS Pout @7V 400mA (@15GHz, f=10MHz) 3. P-1 VS VD @Idsq=400mA P213 P-1(dBm) VS VD @Idsq=400mA 30 29 P-1 (dBm) EMP213 OIMD(dBc) VS Pout(dBm) 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 0 5 10 15 20 25 Each Tone Pout (dBm) OIMD (dBc) IMD3 IMD5 28 27 26 25 12 13 14 15 16 17 Frequency (GHz) VD=8V VD=7V APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE) Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325C for 20 minutes. Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC, and RF contacts. All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental discharge through a die. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised May 2008 EMP213 UPDATED 05/08/2008 12.5 - 15.5 GHz Power Amplifier MMIC ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two 1.0mil gold wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 1130 x 2250 microns Chip Thickness: 85 15 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised May 2008 EMP213 UPDATED 05/08/2008 12.5 - 15.5 GHz Power Amplifier MMIC DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised May 2008 |
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